Spin-Orbit Interaction and Spin Field Effect Transistors SEMINAR ANNOUNCEMENT

The 1^st generation magnetic memory device relies on its switching by the external magnetic field and the 2^nd generation magnetic memory device switches its state by current.

However, the 1^st and 2^nd generation magnetic memories suffer from tremendous heat in highly integrated circuits. To overcome problems caused by heat, researchers have been trying to find a next generation memory devices with ultra-low power consumption.

Having not been developed yet, the 3^rd generation magnetic memory device may be switched by gate electric field and hence power consumption is reduced to an ideal level. Therefore, the gate modulation of spin-orbit interaction (SOI) will play an important role in electron transport of next generation spintronic devices.

This presentation will cover issues of spintronics such as concept of spin polarization, spin injection and detection, Rashba and Dresselhaus SOI, gate modulation of SOI, and spin field effect transistor.